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Kazuhito Tsukagoshi - International Center for Materials Nanoarchitectonics

Gate-induced semiconductive property and device-operation in bilayer graphene


Contact :

 

Kazuhito Tsukagoshi (1 2)

 

  • (1) International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
  • (2) Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan

 

We present a review of our experiments on graphene transistors in its potential use as atomic film switching devices.
We found that large transport energy gaps (>100 meV) can be fulfilled in dualgated bilayer graphene underneath a simple alumina passivation top gate stack, which directly contacts the graphene channels without an inserted buffer layer. With the presence of energy gaps, the electrical properties of the graphene transistors are significantly enhanced, as manifested by enhanced on/off current ratio, subthreshold slope, and current saturation. For the first time, complementary-like semiconducting logic graphene inverters are demonstrated that show a large improvement over their metallic counterparts. This result may open the way for logic applications of gap-engineered graphene.

 

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Contact laboratoire :

H. Bouchiat (bouchiat@lps.u-psud.fr)