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A nanoscopic tsunami inside the electronic chip

A team of researchers from the Laboratoire de Physique des Solides, a CNRS,Univ. Paris-Sud, Université Paris-Saclay laboratory (Orsay, France), the Magnet Lab (Florida, USA) and UBA-CNEA (Buenos Aires, Argentina) have reported their finding of the tiniest of shockwaves ramming through a novel electronic memory device. The shockwave is not made of water but of oxygen atoms, which is a basic constituent of "strongly correlated" oxides. This nanoscale "tsunami" of oxygen sweeps through the interface between the electrode and the oxide, dramatically changing the resistance of the system. In fact, this device belongs to one of the emerging technologies for novel electronic memories, the memristors, which are based on the resistive switching phenomenon. This novel memories store information in the form of a resistance value, hi and lo for a binary case, but may also allow for multi-bit and even analog storage. The discovery of the shockwave front occurring during the resistive switching provides unprecedented physical insight into the behavior of the system during the sudden resistive change, which is a key feature to control the commutation speed of these memories. The article is published in the Physical Review X journal.

Reference :

Shock-waves and commutation speed of memristors
Shao Tang et al.
Phys. Rev. X 6, 011028 (2016).

PRX Synopsis : Waves That Shock Resistance

Contacts :

Marcelo Rozenberg