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Nanoelectronics : from condensed matter physics to molecular science - Natalia Alyabyeva

Institut des Sciences Moléculaires d’Orsay

LPS – amphi Moyen

The modernization in nanoelectronics mainly relates to the improvement of the packing density for higher speed and lower power consumption. Development of novel technologies requires new materials or new concepts. In this talk, I will present several approaches to fabricate ordered assemblies of nanoelements by local oxidation, local milling and self-assembling from different point of view : the condensed matter physics or molecular science.

First, memristor properties of ZnO, VOx and TiOx will be discussed with subsequent description of the atomic force microscopy (AFM) local nanolithography to fabricate an array of memristors [1], as well as their characterization and advantages in nanoelectronics.

The second system concerns nanocapacitors made of ferroelectric materials. Properties of BiFeO3 thin films studied by atomic force, scanning electron and transmission electron microscopes will be discussed, as well as the role of ferroelectricity and ferroelasticity in the novel information storage devices [2, 3, 4]. The technological route of nanofabrication of BiFeO3 capacitor cells using focused ion beam techniques : chemical vapour deposition and etching will be detailed. The novel idea of piezoelectrically-driven switching devices will be presented by bringing a concept of stress-induced metal-insulator transition in V2O3 thin film. I will demonstrate recent results concerning pressure-induced transition in a c-axis oriented V2O3 thin film from strongly correlated metal to Mott insulator in a submicrometric region by inducing a local stress using AFM [5].

Finally, hybrid self-assembled systems on surface containing metallic core/shell nanoparticles [6, 7] and molecules as an elementary unit will be discussed. I will present investigations using scanning tunnelling microscopy, differential reflectance spectroscopy and sum frequency generation of hybrid system containing metallic NPs and perylene on Al2O3/Ni3Al(111) as a model architecture for future nanoelectronic devices [8].

[1] O. A. Ageev, N. I. Alyab’eva, B. G. Konoplev, V. V. Polyakov, V. A. Smirnov. Semiconductors, 44, 1703–1708 (2010).
[2] N. Alyabyeva, A. Ouvrard, I. Lindfors-Vrejoiu, O. Ageev, and D. McGrouther. Appl. Phys. Lett., 111, 222901 (2017).
[3] N. Alyabyeva, A. Ouvrard, I. Lindfors-Vrejoiu, A. Kolomiytsev, M. Solodovnik, O. Ageev and D. McGrouther. Phys. Rev. Materials, 2, 064402 (2018).
[4] N. Alyabyeva, A. Ouvrard, I. Lindfors-Vrejoiu, A. Kolomiytsev, O. Ageev and D. McGrouther. Under prep. for Nature Comm.
[5] N. Alyabyeva, J. Sakai, J. Wolfman, P. Limelette, H. Funakubo and A. Ruyter. Under review in Appl. Phys. Lett. (2018).
[6] N. Alyabyeva, A. Ouvrard, A.-M. Zakaria, F. Charra and B. Bourguignon. App. Surf. Sci. 444, 423-429 (2018).
[7] N. Alyabyeva, A. Ouvrard, A.-M. Zakaria and B. Bourguignon. Submitted to Nano Lett. (2018).
[8] N. Alyabyeva, A. Ouvrard, and B. Bourguignon. Under prep. for ACS Nano.


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