Affichage des résultats 1 à 12 sur 20 au total
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Article dans une revue
Shimul Kanti Nath, Ibrahim Turan, Léonard Desvignes, Ludovic Largeau, Olivia Mauguin, et al.. Tuning Superconductivity in Nanosecond Laser‐Annealed Boron‐Doped Si 1– x Ge x Epilayers. Physica Status Solidi A (applications and materials science), 2024, pp.2400313. ⟨10.1002/pssa.202400313⟩. ⟨hal-04794790⟩
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Article dans une revue
Andrea Ristori, Mario Khoury, Marco Salvalaglio, Angelos Filippatos, Michele Amato, et al.. Strain engineering of the electronic states of silicon-based quantum emitters. Advanced Optical Materials, 2024, 12 (4), pp.2301608. ⟨10.1002/adom.202301608⟩. ⟨hal-04244318⟩
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Article dans une revue
Marc Túnica, Alberto Zobelli, Michele Amato. Acceptor and donor impurity levels in hexagonal-diamond silicon. Physical Review Materials, 2024, 8 (11), ⟨10.1103/PhysRevMaterials.8.114601⟩. ⟨hal-04870838⟩
Année de publication
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Article dans une revue
Ivan Marri, Simone Grillo, Michele Amato, Stefano Ossicini, Olivia Pulci. Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core–Shell Nanocrystals. Journal of Physical Chemistry C, 2023, 127 (2), pp.1209-1219. ⟨10.1021/acs.jpcc.2c07024⟩. ⟨hal-04453304⟩
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Article dans une revue
Anthony Impellizzeri, Michele Amato, Chris Ewels, Alberto Zobelli. Electronic Structure of Folded Hexagonal Boron Nitride. Journal of Physical Chemistry C, 2022, 126 (41), pp.17746-17752. ⟨10.1021/acs.jpcc.2c05549⟩. ⟨hal-03850924⟩
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Article dans une revue
K. Badiane, G. Rodary, M. Amato, A. Gloter, C. David, et al.. Atomic-scale visualization of the p − d hybridization in III-V semiconductor surfaces doped with transition metal impurities. Physical Review B, 2022, 105 (23), pp.235443. ⟨10.1103/PhysRevB.105.235443⟩. ⟨hal-03763319⟩
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Article dans une revue
Giacomo Giorgi, Michele Amato, Stefano Ossicini, Xavier Cartoixà, Enric Canadell, et al.. Doping of III–V Arsenide and Phosphide Wurtzite Semiconductors. Journal of Physical Chemistry C, 2020, 124 (49), pp.27203-27212. ⟨10.1021/acs.jpcc.0c09391⟩. ⟨hal-04453282⟩
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Article dans une revue
Dipankar Kalita, Michele Amato, Alexandre Artaud, Läetitia Marty, Vincent Bouchiat, et al.. Fermi resonance in the Raman spectrum of graphene. Physical Review B, 2020, 102 (7), pp.075436. ⟨10.1103/PhysRevB.102.075436⟩. ⟨hal-03004723⟩
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Article dans une revue
Michele Amato, Thanayut Kaewmaraya, Alberto Zobelli. Extrinsic Doping in Group IV Hexagonal-Diamond-Type Crystals. Journal of Physical Chemistry C, 2020, 124 (31), pp.17290-17298. ⟨10.1021/acs.jpcc.0c03713⟩. ⟨hal-04453272⟩
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Article dans une revue
Luiz Galvão Tizei, Michele Amato. Electronic structure and optical properties of semiconductor nanowires polytypes. The European Physical Journal B: Condensed Matter and Complex Systems, 2020, 93 (1), pp.16. ⟨10.1140/epjb/e2019-100375-7⟩. ⟨hal-04453224⟩
Année de publication
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Article dans une revue
Stefano Ossicini, Ivan Marri, Michele Amato, Maurizia Palummo, Enric Canadell, et al.. Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. Faraday Discussions, 2020, 222, pp.217-239. ⟨10.1039/C9FD00085B⟩. ⟨hal-04453268⟩
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Article dans une revue
Ivan Marri, Michele Amato, Matteo Bertocchi, Andrea Ferretti, Daniele Varsano, et al.. Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures. Physical Chemistry Chemical Physics, 2020, 22 (44), pp.25593-25605. ⟨10.1039/D0CP04013D⟩. ⟨hal-04453269⟩